| PART |
Description |
Maker |
| SFH300-2 SFH300-3 SFH300FA-3 SFH300FA-4 SFH300 SFH |
.NPN-Silizium-Fototransistor Silicon NPN Phototransistor PHOTO TRANSISTOR DETECTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OP750A OP750B OP750D OP750C |
NPN Photo transistor
|
OPTEK Technologies
|
| Q62702-P1192 Q62702-P1058 BP103BF BP103B Q62702-P8 |
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter PHOTO TRANSISTOR DETECTOR
TVS BIDIRECT 600W 9.0V SMB PHOTO TRANSISTOR DETECTOR
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silizium - Fototransistor东北大学：叩- Silizium - Fototransistor麻省理工Tageslichtsperrfilter
TVS ZENER BIDIRECT 600W 85V SMB
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MEL79D |
NPN SILICON PHOTO-TRANSISTOR
|
Micro Electronics
|
| MEL79 |
NPN SILICON PHOTO TRANSISTOR
|
Micro Electronics
|
| OP805SL OP800SL OP801SL OP802SL OP803SL OP804SL |
NPN Silicon Phototransistor(NPN光敏晶体管，窄接收角，集电极最小电.0mA,可替代OP800和K5251系列产品) PHOTO TRANSISTOR DETECTOR
NPN Silicon Phototransistors
|
TT electronics OPTEK Technology
OPTEK[OPTEK Technologies]
|
| BDX67 BDX67A BDX67B BDX67C |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 16 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
| TEST2600 |
PHOTO TRANSISTOR DETECTOR
From old datasheet system
Silicon NPN Phototransistor(楂????害纭?PN澶?欢骞抽?????朵?绠?
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| 2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| NTE99 |
Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode
|
NTE[NTE Electronics]
|
